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Low OperatingVoltage, High fT Bipolar Microwave Transistors
Features *Designed for Battery Operation *fT to 10 GHz *Low Voltage Oscillator and Amplifier *Low Phase Noise and Noise Figure *Hermetic and Surface Mount Packages and Chips Av ailable *Can be Screened to JANTX, JANTXV Equiv alent Lev els Description The MP4T6365 family of low v oltage, high gain bandwidth silicon NPN bipolar transistors prov ides low noise figure and high gain at low bias v oltages. These transistors are especially attractiv e for low operating v oltage low noise amplifiers or driv er amplifiers at frequencies to 4 GHz. They are also useful for low phase noise local oscillators and VCOs in battery operated equipment to 10 GHz. The MP4T6365 family was designed to hav e low noise figure at operating v oltages as low as 3 v olts. These transistors also exhibit low phase noise in VCOs operating at 5 v olts or less. Because this transistor family was specifically designed to perate from low bias v oltage, it has superior phase noise in comparison to similar current bipolar transistors with higher collector breakdown v oltage when operating under the same low v oltage conditions. The MP4T6365 series transistors are av ailable in hermetic Micro-X packages, the SOT-23, the SOT-143, and in chip form (MP4T636500). Other stripline and hermetic packages are av ailable. The chip and hermetic packages can be screened to JANTX, JANTXV equiv alent lev els. The plastic parts can be supplied on tape and reel. All of M-Pulse' silicon bipolar transistor families use s silicon dioxide and silicon nitride passiv ation to assure low 1/F noise for amplifier and oscillator applications.
MP4T6365
V2.00
Case Styles
SOT-23
SOT-143
Chip
Micro-X
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
1
Tel (408) 432-1480
Fax (408)) 432-3440
Low Operating Voltage, High fT Bipolar Microwave Transistors
Maximum Ratings (TA = 25 C) MP4T6365 Series
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Operating Temperature Storage Temperature Chip or Ceramic Packages Plastic Packages Power Dissipation Package Type Chip (MP4T636500) SOT-23 (MP4T636533) Micro-X Package (MP4T636535) SOT-143 (MP4T636539) Maximum Dissipation @ 25 C 400 mW 200 mW 300 mW 225 mW Maximum Operating Temperature 175 C 125 C 150 C 125 C VCBO VCE VEB IC Tj TS 10 V 6V 1.5 V 65 mA 200 C -65 to +200 C C -65 to +125 C C
MP4T6365 Series
V2.00
Electrical Specifications @ 25 C
MP4T6365 Series
MP4T636500 Parameter of Test Gain Bandwidth Product Insertion Power Gain Condition VCE = 3 V I C = 20 mA VCE = 3 V I C = 10 mA f = 1 GHz f = 2 GHz VCE = 3 V I C = 5 mA f = 1 GHz f = 2 GHz VCE = 3 V I C = 5 mA f = 1 GHz f = 2 GHz VCE = 3 V I C = 20 mA f = 1 GHz f = 2 GHz VCE = 3 V I C = 20 mA f = 2 GHz f = 4 GHz Symbol fT |S21E|2 Units GHz dB 14 typ 7.0 min NF dB 1.3 typ 1.6 typ GTU (max) dB 15 typ 10 typ MAG dB 16 typ 12 typ P1dB dBm 16 typ 12 typ 17 typ 13 typ 16 typ 12 typ 16 typ 12 typ 16 typ 11 typ 16 typ 10 typ 16 typ 10 typ 15 typ 10 typ 14 typ 9 typ 14 typ 9 typ 1.3 typ 1.6 typ 1.4 typ 1.7 typ 1.4 typ 1.7 typ 13 typ 7.0 min 13 typ 7.0 min 13 typ 7.0 min Chip 10 typ MP4T636535 Micro-X 10 typ MP4T636539 SOT-143 10 typ MP4T636533 SOT-23 10 typ
Noise Figure
Unilateral Gain
Maximum Available Gain
Output Power at 1 dB Compression
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
2
Tel (408) 432-1480
Fax (408)) 432-3440
Low Operating Voltage, High fT Bipolar Microwave Transistors
Electrical Specifications @ 25 C
Parameter Collector Cut-off Current Emitter Cut-off Current Forward Current Gain Collector-Base Junction Capacitance Condition VCB = 3 volts I E = 0 A VEB = 1 volt I C = 0 A VCE = 3 volts I C = 5 mA VCB = 5 volts I E = 0 A f = 1 MHz Symbol I CBO I EBO hFE COB Min 30 Typical 75 0.50
MP4T6365 Series
V2.00
Max 100 1 200 0.70
Units A A pF
Typical Common Emitter Scattering Parameters in the MIcro-X Package MP4T636535, VCE = 3 Volts, IC = 5 mA
Frequency (MHz) 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 S11E Mag. 0.640 0.580 0.571 0.590 0.597 0.622 0.646 0.676 0.712 0.750 0.793 0.833 Angle -103 -153 -175 168 155 144 134 124 115 106 96 88 Mag. 6.343 3.984 2.813 2.214 1.853 1.632 1.460 1.341 1.241 1.191 1.130 1.081 S21E Angle 116.9 91.5 77.9 67.0 57.9 48.2 40.1 31.7 23.7 16.4 8.4 2.5 Mag. 0.103 0.123 0.135 0.146 0.159 0.174 0.190 0.205 0.218 0.238 0.257 0.272 S12E Angle 38.7 29.0 27.7 26.8 27.3 27.3 26.8 25.6 24.1 22.2 20.2 17.3 Mag 0.534 0.346 0.250 0.242 0.211 0.227 0.229 0.238 0.255 0.277 0.310 0.323 S22E Angle -75.2 -103.0 -124.9 -140.4 -150.2 -164.1 -168.0 170.7 167.9 157.8 153.0 145.0
MP4T636535, VCE = 3 Volts, IC = 10 mA
Frequency (MHz) 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 S11E Mag. 0.580 0.589 0.592 0.617 0.625 0.652 0.676 0.707 0.741 0.776 0.817 0.855 Angle -142 -175 170 157 146 136 127 118 109 100 91 82 Mag. 8.562 4.641 3.200 2.480 2.069 1.811 1.613 1.479 1.366 1.311 1.240 1.118 S21E Angle 104.6 85.8 75.1 65.9 57.9 48.9 41.3 33.3 25.6 18.5 10.6 3.0 Mag. 0.066 0.086 0.106 0.125 0.150 0.172 0.195 0.218 0.234 0.259 0.281 0.298 S12E Angle 39.1 40.5 42.9 43.0 42.7 40.8 38.3 35.1 31.9 28.1 24.9 20.5 Mag 0.389 0.274 0.228 0.243 0.220 0.250 0.251 0.270 0.281 0.311 0.342 0.351 S22E Angle -102.8 -132.0 -158.1 -169.4 171.9 166.9 161.4 150.2 146.1 135.9 132.5 125.1
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
3
Tel (408) 432-1480
Fax (408)) 432-3440
Low Operating Voltage, High fT Bipolar Microwave Transistors
Typical Common Emitter Scattering Parameters in the MIcro-X Package (Cont' d) MP4T636535, VCE = 3 Volts, IC = 20 mA
Frequency (MHz) 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 S11E Mag. 0.551 0.567 0.577 0.599 0.611 0.633 0.659 0.689 0.724 0.758 0.800 0.840 Angle -160 177 164 153 143 133 125 116 107 99 90 82 Mag. 9.374 4.916 3.373 2.613 2.174 1.898 1.690 1.552 1.444 1.378 1.309 1.252 S21E Angle 99.1 84.2 74.7 66.4 58.9 50.6 43.4 35.8 28.4 21.4 13.5 6.0 Mag. 0.048 0.071 0.094 0.117 0.144 0.169 0.194 0.219 0.238 0.263 0.287 0.304 S12E Angle 46.7 52.5 54.2 53.2 52.0 49.2 45.9 42.1 38.3 33.9 30.0 25.3
MP4T6365 Series
V2.00
S22E Mag 0.321 0.238 0.217 0.223 0.214 0.232 0.242 0.256 0.274 0.294 0.319 0.333 Angle -111.2 -139.5 -161.0 -171.4 168.4 163.6 159.3 149.4 144.3 135.8 130.4 124.2
MP4T636535, VCE = 3 Volts, IC = 40 mA
Frequency (MHz) 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 S11E Mag. 0.589 0.604 0.620 0.642 0.666 0.681 0.704 0.738 0.777 0.819 0.858 0.896 Angle -173 141 159 149 138 128 119 110 101 92 82 73 Mag. 9.150 5.202 3.505 2.685 2.218 1.935 1.710 1.560 1.445 1.365 1.290 1.228 S21E Angle 93.6 80.8 70.8 62.2 54.1 45.9 37.6 29.8 22.3 14.5 6.7 -1.4 Mag. 0.044 0.067 0.094 0.119 0.145 0.172 0.195 0.218 0.240 0.262 0.284 0.305 S12E Angle 55.7 59.2 58.6 56.4 53.8 50.0 46.0 41.9 37.8 33.7 29.9 25.5 Mag 0.275 0.220 0.210 0.210 0.212 0.220 0.234 0.248 0.265 0.283 0.301 0.328 S22E Angle -120.0 -147.2 -164.0 174.3 171.8 168.3 161.2 153.7 147.0 140.6 134.8 128.3
MP4T636535, VCE = 3 Volts, IC = 60 mA
Frequency (MHz) 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 S11E Mag. 0.604 0.614 0.631 0.655 0.681 0.697 0.721 0.758 0.798 0.843 0.883 0.922 Angle -179 167 156 146 135 125 116 107 97 88 79 69 Mag. 8.203 4.730 3.220 2.480 2.048 1.778 1.573 1.430 1.325 1.255 1.190 1.125 S21E Angle 92.9 80.5 69.9 60.6 51.8 43.3 34.8 26.8 19.3 11.4 3.3 -5.2 Mag. 0.040 0.084 0.091 0.116 0.141 0.166 0.189 0.211 0.232 0.254 0.279 0.298 S12E Angle 60.9 63.6 61.8 59.0 55.8 51.9 47.9 43.9 40.0 36.2 32.4 27.6 Mag 0.242 0.189 0.182 0.181 0.182 0.190 0.204 0.217 0.234 0.253 0.278 0.300 S22E Angle -112.0 -139.1 -155.9 -168.3 -172.5 -174.3 170.8 164.7 158.5 152.9 146.6 138.4
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
4
Tel (408) 432-1480
Fax (408)) 432-3440
Low Operating Voltage, High fT Bipolar Microwave Transistors
MP4T6365 Typical Performance Curves
MP4T6365 Series
V2.00
POWER DERATING CURVES
500 450 TOTAL POWER DISSIPATION (mW) 400 350 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 AMBIENT TEMP (7C)
MP4T636533 in SOT-23 Package MP4T636535 in Micro-X Package MP4T636500 Chip on Infinite Heat Sink
NOMINAL COLLECTOR-BASE CAPACITANCE (COB) vs COLLECTOR-BASE VOLTAGE (MP4T636535)
1.1 1 COLLECTOR-BASE CAPACITANCE (pF) 0.9 0.8 0.7 0.6 0.5 0.4 0 5 10 15 COLLECTOR-BASE VOLTAGE (Volts)
NOMINAL GAIN vs FREQUENCY at VCE = 3 Volts, IC = 10 mA (MP4T636535)
24 GAIN (dB) 20 GAIN (dB) 16 GTU (MAX) 12 8 |S21E|2 4 0 1 2 FREQUENCY (GHz) 5 10
NOMINAL GAIN vs COLLECTOR CURRENT at f = 1.0 GHz, VCE = 3 Volts (MP4T636535)
20 19 18 17 16 15 14 13 12 11 1 10 COLLECTOR CURRENT (mA) 100 |S21E|2
GTU (MAX) MAG
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
5
Tel (408) 432-1480
Fax (408)) 432-3440
Low Operating Voltage, High fT Bipolar Microwave Transistors
MP4T6365 Series
V2.00
Typical Performance Curves (Cont' d)
NOMINAL GAIN BANDWIDTH PRODUCT (fT) vs COLLECTOR CURRENT at VCE = 3 VOLTS (MP4T636535)
12 10 8 6 4 2 1 10 COLLECTOR CURRENT (mA) 100
DC CURRENT GAIN (h ) FE
NOMINAL DC CURRENT GAIN (hFE) vs COLLECTOR CURRENT at VCE = 3 VOLTS (MP4T636535)
120 110 100 90 80 70 60 50 40 0 10 20 30 40 50 60 70 COLLECTOR CURRENT (mA)
GAIN BANDWIDTH PRODUCT (GHz)
NOMINAL NOISE FIGURE and ASSOCIATED GAIN vs FREQUENCY at VCE = 3 VOLTS, COLLECTOR CURRENT = 5 mA (MP4T636535)
100 NOISE ASSOCIATED FIGURE(dB) GAIN (dB) 16 NOISE ASSOCIATED FIGURE(dB) GAIN (dB) 14 12
NOMINAL NOISE FIGURE and ASSOCIATED GAIN at VCE = 3 VOLTS, and 1 GHz vs the COLLECTOR CURRENT (MP4T636535)
ASSOCIATED GAIN 10 8 6 4 2 0 1 10 COLLECTOR CURRENT (mA) 100 NOISE FIGURE
10
ASSOCIATED GAIN
2 1 0.1
NOISE FIGURE
1 COLLECTOR CURRENT (mA)
10
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
6
Tel (408) 432-1480
Fax (408)) 432-3440
Low Operating Voltage, High fT Bipolar Microwave Transistors
Typical Performance Curves (Cont' d)
NOMINAL OUTPUT POWER at the 1dB COMPRESSION POINT vs COLLECTOR CURRENT at f = 2 and 4 GHz, VCE = 3 VOLTS (MP4T636535)
24 22 POWER OUT @ 1 dB COMPRESSION (dBm) 20 18 16 14 12 10 8 6 0 10 20 COLLECTOR CURRENT (mA) 30 40 4 GHz 2 GHz
MP4T6365 Series
V2.00
Case Styles MP4T636533 SOT-23 MA4T636533
F D Collector M G B K A N
L H Base J Emitter C E
DIM. A B C D E F G H J K L DIM. M N
INCHES MIN. MAX. 0.044 0.004 0.040 0.013 0.020 0.003 0.006 0.110 0.119 0.047 0.056 0.037 typical 0.075 typical 0.103 0.024 GRADIENT 10max. 1 2. . . 30
MILLIMETERS MIN. MAX. 1.12 0.10 1.00 0.35 0.50 0.08 0.15 2.80 3.00 1.20 1.40 0.95 typical 1.90 typical 2.60 0.60
NOTE: 1. Applicable on all sides
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
7
Tel (408) 432-1480
Fax (408)) 432-3440
Low Operating Voltage, High fT Bipolar Microwave Transistors
Case Styles (Cont' d) MP4T636535 Micro-X MP4T636535
Emitter F 4 PLCS. E H
MP4T6365 Series
V2.00
Collector B
Base
Emitter
DIM. A B C D E F G H
C
INCHES MIN. MAX. 0.092 0.108 0.079 0.087 0.070 0.019 0.025 0.018 0.022 0.150 0.003 0.006 45
MILLIMETERS MIN. MAX. 2.34 2.74 2.01 2.21 1.78 0.48 0.64 0.46 0.56 3.81 0.08 0.15 45
A
G
D
MP4T636500
DIM. A B (Dia.) 2 plcs. C D E F (chip thickness)
C E
MP4T636500
B
BASE
INCHES 0.013 0.0012 0.004 0.0005 0.013 0.0045
MILLIMETERS 0.325 0.030 0.110 0.013 0.325 0.114
MP4T636539
EMITTER
D A
Case Style SOT-143 MP4T636539
Emitter G J A P Base
DIM. A B C D E F G H J K L M DIM. N P
N H
B L
INCHES MIN. MAX. 0.044 0.004 0.040 0.030 0.035 0.013 0.020 0.003 0.006 0.110 0.119 0.047 0.056 0.075 typical 0.040 typical 0.103 0.024 GRADIENT 10max. 1 2. . . 30
MILLIMETERS MIN. MAX. 1.10 0.10 1.00 0.75 0.90 0.35 0.50 0.08 0.15 2.80 3.00 1.20 1.40 1.90 typical 1.70 typical 2.60 0.60
M E K Collector Emitter D C F
NOTE: 1. Applicable on all sides
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
8
Tel (408) 432-1480
Fax (408)) 432-3440

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